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1. product pro?le 1.1 general description pnp low v cesat breakthrough in small signal (biss) transistor and npn resistor- equipped transistor (ret) in a sot457 (sc-74) small surface mounted device (smd) plastic package. 1.2 features n low v cesat (biss) and resistor-equipped transistor in one package n low threshold voltage (< 1 v) compared to mosfet n low drive power required n space-saving solution n reduction of component count 1.3 applications n supply line switches n battery charger switches n high-side switches for leds, drivers and backlights n portable equipment 1.4 quick reference data [1] pulse test: t p 300 m s; d 0.02. PBLS2004D 20 v pnp biss loadswitch rev. 01 23 june 2005 product data sheet table 1: quick reference data symbol parameter conditions min typ max unit tr1; pnp low v cesat transistor v ceo collector-emitter voltage open base - - - 20 v i c collector current (dc) - - - 1a r cesat collector-emitter saturation resistance i c = - 1a; i b = - 100 ma [1] - 185 280 m w tr2; npn resistor-equipped transistor v ceo collector-emitter voltage open base - - 50 v i o output current - - 100 ma r1 bias resistor 1 (input) 15.4 22 28.6 k w r2/r1 bias resistor ratio 0.8 1 1.2
PBLS2004D_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 23 june 2005 2 of 16 philips semiconductors PBLS2004D 20 v pnp biss loadswitch 2. pinning information 3. ordering information 4. marking 5. limiting values table 2: pinning pin description simpli?ed outline symbol 1 emitter tr1 2 base tr1 3 output (collector) tr2 4 gnd (emitter) tr2 5 input (base) tr2 6 collector tr1 13 2 4 5 6 65 4 1 23 r2 tr1 tr2 r1 sym036 table 3: ordering information type number package name description version PBLS2004D sc-74 plastic surface mounted package; 6 leads sot457 table 4: marking codes type number marking code PBLS2004D f9 table 5: limiting values in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit tr1; pnp low v cesat transistor v cbo collector-base voltage open emitter - - 20 v v ceo collector-emitter voltage open base - - 20 v v ebo emitter-base voltage open collector - - 5v i c collector current (dc) - - 1a i cm peak collector current t p 300 m s- - 2a i b base current (dc) - - 0.3 a i bm peak base current t p 300 m s- - 0.6 a p tot total power dissipation t amb 25 c [1] - 250 mw [2] - 350 mw [3] - 400 mw
PBLS2004D_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 23 june 2005 3 of 16 philips semiconductors PBLS2004D 20 v pnp biss loadswitch [1] device mounted on an fr4 printed-circuit board (pcb), single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 1 cm 2 . [3] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. tr2; npn resistor-equipped transistor v cbo collector-base voltage open emitter - 50 v v ceo collector-emitter voltage open base - 50 v v ebo emitter-base voltage open collector - 10 v v i input voltage positive - +40 v negative - - 10 v i o output current - 100 ma i cm peak collector current t p 300 m s - 100 ma p tot total power dissipation t amb 25 c [1] - 200 mw per device p tot total power dissipation [1] - 400 mw [2] - 530 mw [3] - 600 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c t amb ambient temperature - 65 +150 c (1) ceramic pcb, al 2 o 3 , standard footprint (2) fr4 pcb, mounting pad for collector 1 cm 2 (3) fr4 pcb, standard footprint fig 1. power derating curves table 5: limiting values continued in accordance with the absolute maximum rating system (iec 60134). symbol parameter conditions min max unit t amb ( c) 0 160 120 40 80 006aaa414 0.4 0.2 0.6 0.8 p tot (w) 0 (1) (2) (3)
PBLS2004D_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 23 june 2005 4 of 16 philips semiconductors PBLS2004D 20 v pnp biss loadswitch 6. thermal characteristics [1] device mounted on an fr4 pcb, single-sided copper, tin-plated and standard footprint. [2] device mounted on an fr4 pcb, single-sided copper, tin-plated, mounting pad for collector 1 cm 2 . [3] device mounted on a ceramic pcb, al 2 o 3 , standard footprint. table 6: thermal characteristics symbol parameter conditions min typ max unit per device r th(j-a) thermal resistance from junction to ambient in free air [1] - - 315 k/w [2] - - 236 k/w [3] - - 210 k/w fr4 pcb, standard footprint fig 2. tr1 (pnp): transient thermal impedance from junction to ambient as a function of pulse time; typical values 0 006aaa415 10 1 10 2 10 3 z th(j-a) (k/w) 10 - 1 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 duty cycle = 1 0.75 0.5 0.33 0.2 0.1 0.05 0.02 0.01
PBLS2004D_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 23 june 2005 5 of 16 philips semiconductors PBLS2004D 20 v pnp biss loadswitch fr4 pcb, mounting pad for collector 1 cm 2 fig 3. tr1 (pnp): transient thermal impedance from junction to ambient as a function of pulse time; typical values ceramic pcb, al 2 o 3 , standard footprint fig 4. tr1 (pnp): transient thermal impedance from junction to ambient as a function of pulse time; typical values 006aaa463 10 1 10 2 10 3 z th(j-a) (k/w) 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 0.75 0.5 0.33 0.2 0.1 d = 1 0.05 0.02 0.01 0 006aaa464 10 1 10 2 10 3 z th(j-a) (k/w) 10 - 5 10 10 - 2 10 - 4 10 2 10 - 1 t p (s) 10 - 3 10 3 1 0.75 0.5 0.33 0.2 0.1 d = 1 0.05 0.02 0.01 0
PBLS2004D_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 23 june 2005 6 of 16 philips semiconductors PBLS2004D 20 v pnp biss loadswitch 7. characteristics table 7: characteristics t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit tr1; pnp low v cesat transistor i cbo collector-base cut-off current v cb = - 20 v; i e =0a - - - 0.1 m a v cb = - 20 v; i e =0a; t j = 150 c -- - 50 m a i ces collector-emitter cut-off current v ce = - 20 v; v be =0v - - - 0.1 m a i ebo emitter-base cut-off current v eb = - 5 v; i c =0a - - - 0.1 m a h fe dc current gain v ce = - 2 v; i c = - 1 ma 220 495 - v ce = - 2 v; i c = - 100 ma 220 440 - v ce = - 2 v; i c = - 500 ma [1] 220 310 - v ce = - 2 v; i c = - 1a [1] 155 220 - v ce = - 2 v; i c = - 2a [1] 60 120 - v cesat collector-emitter saturation voltage i c = - 100 ma; i b = - 1ma - - 55 - 90 mv i c = - 500 ma; i b = - 50 ma [1] - - 100 - 150 mv i c = - 1 a; i b = - 50 ma [1] - - 200 - 300 mv i c = - 1 a; i b = - 100 ma [1] - - 185 - 280 mv r cesat collector-emitter saturation resistance i c = - 1 a; i b = - 100 ma [1] - 185 280 m w v besat base-emitter saturation voltage i c = - 1 a; i b = - 50 ma [1] - - 0.95 - 1.1 v i c = - 1 a; i b = - 100 ma [1] - - 1 - 1.1 v v beon base-emitter turn-on voltage v ce = - 5 v; i c = - 1a [1] - - 0.85 - 1.1 v t d delay time i c = - 1 a; i bon = - 50 ma; i boff =50ma -8 - ns t r rise time - 34 - ns t on turn-on time - 42 - ns t s storage time - 140 - ns t f fall time - 45 - ns t off turn-off time - 185 - ns f t transition frequency i c = - 50 ma; v ce = - 10 v; f = 100 mhz 150 185 - mhz c c collector capacitance v cb = - 10 v; i e =i e =0a; f=1mhz -1520pf
PBLS2004D_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 23 june 2005 7 of 16 philips semiconductors PBLS2004D 20 v pnp biss loadswitch [1] pulse test: t p 300 m s; d 0.02. tr2; npn resistor-equipped transistor i cbo collector-base cut-off current v cb =50v; i e = 0 a - - 100 na i ceo collector-emitter cut-off current v ce =30v; i b =0a - - 1 m a v ce =30v; i b =0a; t j = 150 c -- 50 m a i ebo emitter-base cut-off current v eb =5v; i c = 0 a - - 180 m a h fe dc current gain v ce =5v; i c = 5 ma 60 - - v cesat collector-emitter saturation voltage i c = 10 ma; i b = 0.5 ma - - 150 mv v i(off) off-state input voltage v ce =5v; i c = 100 m a - 1.1 0.8 v v i(on) on-state input voltage v ce = 0.3 v; i c = 5 ma 2.5 1.7 - v r1 bias resistor 1 (input) 15.4 22 28.6 k w r2/r1 bias resistor ratio 0.8 1 1.2 c c collector capacitance v cb =10v; i e =i e =0a; f=1mhz - - 2.5 pf table 7: characteristics continued t amb =25 c unless otherwise speci?ed. symbol parameter conditions min typ max unit
PBLS2004D_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 23 june 2005 8 of 16 philips semiconductors PBLS2004D 20 v pnp biss loadswitch v ce = - 2v (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c fig 5. tr1 (pnp): dc current gain as a function of collector current; typical values fig 6. tr1 (pnp): collector-emitter saturation voltage as a function of collector current; typical values v ce = - 5v (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c i c /i b =20 (1) t amb = - 55 c (2) t amb =25 c (3) t amb = 100 c fig 7. tr1 (pnp): base-emitter voltage as a function of collector current; typical values fig 8. tr1 (pnp): base-emitter saturation voltage as a function of collector current; typical values 006aaa416 400 600 200 800 1000 h fe 0 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 (1) (2) (3) 006aaa417 - 10 - 1 - 10 - 2 - 1 v cesat (v) - 10 - 3 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 (1) (2) (3) 006aaa418 - 0.6 - 0.4 - 0.8 - 1.0 v be (v) - 0.2 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 (1) (2) (3) 006aaa419 - 0.6 - 0.8 - 0.4 - 1.0 - 1.2 v besat (v) - 0.2 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 (1) (2) (3)
PBLS2004D_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 23 june 2005 9 of 16 philips semiconductors PBLS2004D 20 v pnp biss loadswitch t amb =25 ci c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 55 c fig 9. tr1 (pnp): collector current as a function of collector-emitter voltage; typical values fig 10. tr1 (pnp): collector-emitter saturation resistance as a function of collector current; typical values t amb =25 c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 t amb =25 c (1) i c /i b = 100 (2) i c /i b =50 (3) i c /i b =10 fig 11. tr1 (pnp): collector-emitter saturation voltage as a function of collector current; typical values fig 12. tr1 (pnp): collector-emitter saturation resistance as a function of collector current; typical values 006aaa420 v ce (v) - 0 - 6 - 4 - 2 - 0.8 - 1.2 - 0.4 - 1.6 - 2.0 i c (a) - 0 i b = - 13 ma - 10.4 ma - 11.7 ma - 9.1 ma - 6.5 ma - 3.9 ma - 5.2 ma - 2.6 ma - 1.3 ma - 7.8 ma 006aaa421 10 1 10 2 r cesat ( w ) 10 - 1 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 (1) (2) (3) 006aaa422 - 10 - 1 - 10 - 2 - 1 v cesat (v) - 10 - 3 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 (1) (2) (3) 006aaa423 i c (ma) - 10 - 1 - 10 4 - 10 3 - 1 - 10 2 - 10 1 10 10 2 10 3 r cesat ( w ) 10 - 1 (1) (2) (3)
PBLS2004D_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 23 june 2005 10 of 16 philips semiconductors PBLS2004D 20 v pnp biss loadswitch v ce =5v (1) t amb = 150 c (2) t amb =25 c (3) t amb = - 40 c i c /i b =20 (1) t amb = 100 c (2) t amb =25 c (3) t amb = - 40 c fig 13. tr2 (npn): dc current gain as a function of collector current; typical values fig 14. tr2 (npn): collector-emitter saturation voltage as a function of collector current; typical values v ce = 0.3 v (1) t amb = - 40 c (2) t amb =25 c (3) t amb = 100 c v ce =5v (1) t amb = - 40 c (2) t amb =25 c (3) t amb = 100 c fig 15. tr2 (npn): on-state input voltage as a function of collector current; typical values fig 16. tr2 (npn): off-state input voltage as a function of collector current; typical values i c (ma) 10 - 1 10 2 10 1 006aaa038 10 2 10 10 3 h fe 1 (1) (2) (3) 006aaa039 i c (ma) 110 2 10 10 - 1 v cesat (v) 10 - 2 (1) (2) (3) 006aaa040 i c (ma) 10 - 1 10 2 10 1 1 10 v i(on) (v) 10 - 1 (1) (2) (3) 006aaa041 i c (ma) 10 - 1 10 2 10 1 1 10 v i(off) (v) 10 - 1 (1) (3) (2)
PBLS2004D_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 23 june 2005 11 of 16 philips semiconductors PBLS2004D 20 v pnp biss loadswitch 8. test information fig 17. biss transistor switching time de?nition i c = - 1 a; i bon = - 50 ma; i boff = 50 ma; r1 = open; r2 = 45 w ; r b = 145 w ; r c =10 w fig 18. test circuit for switching times 006aaa266 - i bon (100 %) - i b input pulse (idealized waveform) - i boff 90 % 10 % - i c (100 %) - i c t d t on 90 % 10 % t r output pulse (idealized waveform) t f t t s t off r c r2 r1 dut mgd624 v o r b (probe) 450 w (probe) 450 w oscilloscope oscilloscope v bb v i v cc
PBLS2004D_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 23 june 2005 12 of 16 philips semiconductors PBLS2004D 20 v pnp biss loadswitch 9. package outline 10. packing information [1] for further information and the availability of packing methods, see section 17 . [2] t1: normal taping [3] t2: reverse taping fig 19. package outline sot457 (sc-74) 04-11-08 dimensions in mm 3.0 2.5 1.7 1.3 3.1 2.7 pin 1 index 1.9 0.26 0.10 0.40 0.25 0.95 1.1 0.9 0.6 0.2 13 2 4 5 6 table 8: packing methods the indicated -xxx are the last three digits of the 12nc ordering code. [1] type number package description packing quantity 3000 10000 PBLS2004D sot457 4 mm pitch, 8 mm tape and reel; t1 [2] -115 -135 4 mm pitch, 8 mm tape and reel; t2 [3] -125 -165
PBLS2004D_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 23 june 2005 13 of 16 philips semiconductors PBLS2004D 20 v pnp biss loadswitch 11. soldering dimensions in mm fig 20. re?ow soldering footprint dimensions in mm fig 21. wave soldering footprint solder lands solder resist occupied area solder paste 0.95 2.825 0.45 0.55 1.60 1.95 3.45 1.70 3.10 3.20 3.30 msc422 1.40 4.30 5.30 0.45 msc423 1.45 4.45 5.05 solder lands solder resist occupied area solder paste
PBLS2004D_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01 23 june 2005 14 of 16 philips semiconductors PBLS2004D 20 v pnp biss loadswitch 12. revision history table 9: revision history document id release date data sheet status change notice doc. number supersedes PBLS2004D_1 20050623 product data sheet - - -
philips semiconductors PBLS2004D 20 v pnp biss loadswitch PBLS2004D_1 ? koninklijke philips electronics n.v. 2005. all rights reserved. product data sheet rev. 01.00 23 june 2005 15 of 16 13. data sheet status [1] please consult the most recently issued data sheet before initiating or completing a design. [2] the product status of the device(s) described in this data sheet may have changed since this data sheet was published. the l atest information is available on the internet at url http://www.semiconductors.philips.com. [3] for data sheets describing multiple type numbers, the highest-level product status determines the data sheet status. 14. de?nitions short-form speci?cation the data in a short-form speci?cation is extracted from a full data sheet with the same type number and title. for detailed information see the relevant data sheet or data handbook. limiting values de?nition limiting values given are in accordance with the absolute maximum rating system (iec 60134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information applications that are described herein for any of these products are for illustrative purposes only. philips semiconductors make no representation or warranty that such applications will be suitable for the speci?ed use without further testing or modi?cation. 15. disclaimers life support these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips semiconductors customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips semiconductors for any damages resulting from such application. right to make changes philips semiconductors reserves the right to make changes in the products - including circuits, standard cells, and/or software - described or contained herein in order to improve design and/or performance. when the product is in full production (status production), relevant changes will be communicated via a customer product/process change noti?cation (cpcn). philips semiconductors assumes no responsibility or liability for the use of any of these products, conveys no license or title under any patent, copyright, or mask work right to these products, and makes no representations or warranties that these products are free from patent, copyright, or mask work right infringement, unless otherwise speci?ed. 16. trademarks notice all referenced brands, product names, service names and trademarks are the property of their respective owners. 17. contact information for additional information, please visit: http://www.semiconductors.philips.com for sales of?ce addresses, send an email to: sales.addresses@www.semiconductors.philips.com level data sheet status [1] product status [2] [3] de?nition i objective data development this data sheet contains data from the objective speci?cation for product development. philips semiconductors reserves the right to change the speci?cation in any manner without notice. ii preliminary data quali?cation this data sheet contains data from the preliminary speci?cation. supplementary data will be published at a later date. philips semiconductors reserves the right to change the speci?cation without notice, in order to improve the design and supply the best possible product. iii product data production this data sheet contains data from the product speci?cation. philips semiconductors reserves the right to make changes at any time in order to improve the design, manufacturing and supply. relevant changes will be communicated via a customer product/process change noti?cation (cpcn).
? koninklijke philips electronics n.v. 2005 all rights are reserved. reproduction in whole or in part is prohibited without the prior written consent of the copyright owner. the information presented in this document does not form part of any quotation or contract, is believed to be accurate and reliable and may be changed without notice. no liability will be accepted by the publisher for any consequence of its use. publication thereof does not convey nor imply any license under patent- or other industrial or intellectual property rights. date of release: 23 june 2005 document id: PBLS2004D_1 published in the netherlands philips semiconductors PBLS2004D 20 v pnp biss loadswitch 18. contents 1 product pro?le . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 general description. . . . . . . . . . . . . . . . . . . . . . 1 1.2 features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 quick reference data. . . . . . . . . . . . . . . . . . . . . 1 2 pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2 6 thermal characteristics. . . . . . . . . . . . . . . . . . . 4 7 characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 6 8 test information . . . . . . . . . . . . . . . . . . . . . . . . 11 9 package outline . . . . . . . . . . . . . . . . . . . . . . . . 12 10 packing information. . . . . . . . . . . . . . . . . . . . . 12 11 soldering . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 13 12 revision history . . . . . . . . . . . . . . . . . . . . . . . . 14 13 data sheet status . . . . . . . . . . . . . . . . . . . . . . . 15 14 de?nitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 15 disclaimers . . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 16 trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . . 15 17 contact information . . . . . . . . . . . . . . . . . . . . 15

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